O2 Plasma Stripper (Asher)
Application
Operating Principle
Using a plasma source, a monatomic
reactive species is generated. Oxygen is
the most common reactive species. The
reactive species combines with the photo
resist to form ash which is removed with a
vacuum pump.
ICP configuration avoids energetic ion
bombardment ａnd capacitive coupling,
providing low substrate damage.
Gases Available
O2
N2O
Key Features
• The open-load design allows
fast wafer loading ａnd
unloading.
• Substrate is placed on a quartz
to avoid sputtering/re
deposition of electrode material
• Gas injected into process
chamber via “showerhead” gas
inlet in the top electrode
• Separate RF generators for ICP ａnd
electrode provide separate control
over ion energy ａnd ion density
• High conductance pumping port
provides high gas throughput for
fastest etch rates
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